cll3595 surface mount low leakage silicon diode description: the central semiconductor cll3595 type is an epitaxial planar silicon diode, manufactured in a hermetically sealed glass surface mount package, designed for low leakage, high conductance applications. marking: cathode band maximum ratings: (t a =25c) symbol units peak repetitive reverse voltage v rrm 150 v peak working reverse voltage v rwm 125 v average forward current i o 150 ma forward steady-state current i f 225 ma recurrent peak forward current i f 600 ma peak forward surge current (1.0s pulse) i fsm 500 ma peak forward surge current (1.0s pulse) i fsm 4.0 a power dissipation p d 500 mw operating and storage junction temperature t j , t stg -65 to +200 c thermal resistance ja 350 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i r v r =125v 1.0 na i r v r =125v, t a =125c 500 na i r v r =125v, t a =150c 3.0 a i r v r =30v, t a =125c 300 na bv r i r =100a 150 v v f i f =1.0ma 0.54 0.69 v v f i f =5.0ma 0.62 0.77 v v f i f =10ma 0.65 0.80 v v f i f =50ma 0.75 0.88 v v f i f =100ma 0.79 0.92 v v f i f =200ma 0.834 1.00 v c t v r =0, f=1.0mhz 8.0 pf t rr v r =3.5v, i f =10ma, r l =1.0k 3.0 s sod-80 case r4 (8-january 2010) www.centralsemi.com
cll3595 surface mount low leakage silicon diode sod-80 case - mechanical outline marking: cathode band www.centralsemi.com r4 (8-january 2010)
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